PART |
Description |
Maker |
HSD16M64B8A HMD16M64B8A-10 HMD16M64B8A-10L HMD16M6 |
The HSD16M64B8A is a 16M x 64 bit Synchronous Dynamic RAM high density memory module. Synchronous DRAM Module 128Mbyte (16Mx64-Bit), SO-DIMM, 4Banks, 4K Ref., 3.3V
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List of Unclassifed Manufacturers ETC Hanbit Electronics Co.,Ltd
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M464S1724DTS-C1H M464S1724DTS-L7C M464S1724DTS M46 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16 / 4Banks /4K Refresh / 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 8Mx164Banks4K Refresh3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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IS42VM16100G IS42VM16100G-6BLI |
512K x16Bits x2Banks Low Power Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
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Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
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HYB39L256160AC-7.5 HYB39L256160AT-7.5 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256 MBit Synchronous Low-Power DRAM
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Infineon Technologies AG
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HY5V26CF HY5V26CF-6 HY5V26CF-8 HY5V26CF-H HY5V26CF |
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 4 Banks x 2M x 16bits Synchronous DRAM SDRAM - 128Mb
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HYNIX SEMICONDUCTOR INC
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IS42S32400B-6T IS42S32400B-7T IS42S32400B-6BL IS42 |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
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Integrated Silicon Solution, Inc.
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M52S16161A-10TG M52S16161A-8BG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
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Elite Semiconductor Memory Technology, Inc.
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KM48S8030CT-FL KM48S8030CT-GFH KM48S8030CT-GF7 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Samsung Electronic Electronic Theatre Controls, Inc.
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HY57V28820HCLT-8I HY57V28820HCLT-HI HY57V28820HCLT |
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 SDRAM - 128Mb
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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HY5S6B6DLF-SE HY5S6B6DLF-BE HY5S6B6DSF-BE HY5S6B6D |
4Banks x1M x 16bits Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1 |
1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 512K x 16Bit x 2Banks Synchronous DRAM
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Elite Semiconductor Memory Technology Inc.
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